Research Article
Design and Implementation of ALU Using Graphene Nanoribbon Field-Effect Transistor and Fin Field-Effect Transistor
Table 4
Device parameters for FinFET.
| Parameter | Value |
| FinFET technologies | 7 nm, 10 nm, 14 nm, 16 nm, and 20 nm | Length of the channel (𝐿) | 7 nm, 10 nm, 14 nm, 16 nm, and 20 nm | Thickness of front/back gate oxide | 1.2 nm | Thickness of the fin (Si) | 4 nm | Height of the fin | 7 nm, 10 nm, 14 nm, 16 nm, and 20 nm | Work function | .5 eV/4.9 eV | Power supply (𝑉DD) | 1 V | Channel doping | | Source/drain doping | |
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