Design and Implementation of ALU Using Graphene Nanoribbon Field-Effect Transistor and Fin Field-Effect Transistor

Table 4

Device parameters for FinFET.

Parameter	Value
FinFET technologies	7 nm, 10 nm, 14 nm, 16 nm, and 20 nm
Length of the channel (𝐿)	7 nm, 10 nm, 14 nm, 16 nm, and 20 nm
Thickness of front/back gate oxide	1.2 nm
Thickness of the fin (Si)	4 nm
Height of the fin	7 nm, 10 nm, 14 nm, 16 nm, and 20 nm
Work function	.5 eV/4.9 eV
Power supply (𝑉DD)	1 V
Channel doping
Source/drain doping