Journal of Nanomaterials

Cutting Edge Technologies by Silicon- and Silicon Oxide-Based Nanostructures


Publishing date
01 Nov 2020
Status
Published
Submission deadline
03 Jul 2020

1Sapienza University, Rome, Italy

2Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona, Spain


Cutting Edge Technologies by Silicon- and Silicon Oxide-Based Nanostructures

Description

Due to its semiconductor properties and natural abundance, Si has been widely used for electronics, in both its pure and doped states. In contrast, its oxide SiO2, which is an insulator, is traditionally employed as refractory or filtering material. The rise of nanotechnology and the development of microfabrication techniques have opened new perspectives in this context. As often happens at the nanoscale, Si and SiO2 nanostructures show different properties from the bulk, which can also be tuned according to size and shape. Moreover, they have proven to be excellent substrates for the design of reactive platforms. The combination of these aspects has led to the use of Si and SiO2 as base components for a number of nanomaterials with peculiar behavior, which have applications in a variety of fields from energy to biomedicine to logic gates.

This special issue focuses on the synthesis, characterization, and uses of silicon- and silicon oxide-based nanostructures. We are particularly interested in works dealing with cutting edge technologies and applications, such as energy storage (e.g., lithium and sodium ion batteries), nanoelectronics, catalysis, and theragnostics, but we are also interested in related environmental and health issues. However, considering that a deep knowledge of the physicochemical properties of each system is the basis of robust and advanced technological development, theoretical and computational studies are welcome as well. We invite all interested researchers to submit either original papers or review articles.

Potential topics include but are not limited to the following:

  • Synthesis, characterization, and properties of Si- and SiO2-based nanostructures
  • Silica and silicates from biomasses: production and applications
  • Composite nanomaterials based on Si or SiO2
  • Si- and SiO2-based nanostructures for energy production and storage
  • Si-based nanostructures for electronics, logic gates, and memories
  • Si- and SiO2-based nanostructures for sensing
  • Si- and SiO2-based nanostructures in catalysis
  • Biomedical applications of Si- and SiO2-based nanomaterials
  • Toxicity of silica nanostructures
  • Theory and computational modelling of Si- and SiO2-based nanostructures

Articles

  • Special Issue
  • - Volume 2021
  • - Article ID 5478156
  • - Editorial

Cutting Edge Technologies by Silicon- and Silicon Oxide-Based Nanostructures

Francesca A. Scaramuzzo | Arántzazu González-Campo | Alessandro Dell’Era
  • Special Issue
  • - Volume 2020
  • - Article ID 4272090
  • - Research Article

Electrochemical Characterization of Cu-Catalysed Si Nanowires as an Anode for Lithium-Ion Cells

P. P. Prosini | F. Rondino | ... | A. Santoni
  • Special Issue
  • - Volume 2020
  • - Article ID 5492953
  • - Research Article

Preparation of a Novel Thiol Surface Modifier and Fe3O4 Drug Loading Agent as well as Releasing under pH-Sensitivity

Wang Ya-zhen | Wu Xue-ying | ... | Zu Li-wu
  • Special Issue
  • - Volume 2019
  • - Article ID 6089065
  • - Research Article

Preparation and Thermal Decomposition Kinetics of Novel Silane Coupling Agent with Mercapto Group

Wu Xue-ying | Wang Ya-zhen | ... | Zu Li-wu
  • Special Issue
  • - Volume 2019
  • - Article ID 5231983
  • - Research Article

Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate

Seongjun Kim | Hong-Ki Kim | ... | Hoon-Kyu Shin
  • Special Issue
  • - Volume 2019
  • - Article ID 9628984
  • - Research Article

Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing

Romuald B. Beck | Kamil Ber
Journal of Nanomaterials
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Acceptance rate16%
Submission to final decision138 days
Acceptance to publication53 days
CiteScore5.100
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