All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response
Figure 1
Source-drain I-V characteristics ( versus ) of the CNT-TFT at different gate voltages (). At the same source-drain voltage (), the drain current () decreases as the gate voltage increases from −2.0 V to 2.0 V, suggesting that the SWCNT layer is a p-type carrier (hole) transportation channel.
