Journals
Publish with us
Publishing partnerships
About us
Blog
Journal of Nanotechnology
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Journal of Nanotechnology
/
2017
/
Article
/
Fig 1
/
Research Article
Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET
Figure 1
10 nm test device simulation results of drift current and diffusion current versus gate voltage (
V
GS
) for
V
DS
= 0.1 V.