Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Table 3

Comparison of the simulation results of V_TH extraction methods for various sub 45 nm technologies.

Method	10 nm TN		16 nm TN		22 nm TN		32 nm TN		45 nm TN
	VTLIN	VTSAT	VTLIN	VTSAT	VTLIN	VTSAT	VTLIN	VTSAT	VTLIN	VTSAT
CCM	0.355 V	0.104 V	0.463 V	0.369 V	0.479 V	0.425 V	0.440 V	0.396 V	0.433 V	0.403 V
LEM	0.683 V	N.A	0.719 V	N.A	0.706 V	N.A	0.653 V	N.A	0.634 V	N.A
SDM	0.675 V	0.437 V	0.7 V	0.6 V	0.675 V	0.6 V	0.649 V	0.552 V	0.626 V	0.578 V
GM	0.59 V	0.51 V	0.645 V	0.575 V	0.645 V	0.56 V	0.6 V	0.525 V	0.6 V	0.5 V
MPM	0.7 V	0.55 V	0.7 V	0.625 V	0.7 V	0.675 V	0.65 V	0.675 V	0.65 V	0.675 V
HEEM	0.675 V	N.A	0.675 V	N.A	0.675 V	N.A	0.625 V	N.A	0.625 V	N.A