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Journal of Sensors
Volume 2010, Article ID 937301, 7 pages
Research Article

Experiments on the Release of CMOS-Micromachined Metal Layers

Electronic Engineering Department, Technical University of Catalonia, UPC, C4 Building, Jordi Girona 1-3, 08034 Barcelona, Spain

Received 14 December 2009; Accepted 4 March 2010

Academic Editor: Maria Tenje

Copyright © 2010 Daniel Fernández et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We present experimental results on the release of MEMS devices manufactured using the standard CMOS interconnection metal layers as structural elements and the insulating silicon dioxide as sacrificial layers. Experiments compare the release results of four different etching agents in a CMOS technology (hydrofluoric acid, ammonium fluoride, a mixture of acetic acid and ammonium fluoride, and hydrogen fluoride), describe various phenomena found during the etching process, and show the release results of multilayer structures.