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Modelling and Simulation in Engineering
Volume 2011 (2011), Article ID 541743, 7 pages
Research Article

Coupling and Shielding Properties of the Baffle in ICP System

1Technology Development Center, TEL US Holdings Inc., Suite 244, 255 Fuller Road, Albany, NY 12203, USA
2TEL Technology Center America LLC, Suite 244, 255 Fuller Road, Albany, NY 12203, USA

Received 28 October 2010; Accepted 13 June 2011

Academic Editor: Agostino Bruzzone

Copyright © 2011 Jozef Brcka and R. Lee Robison. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This contribution is dealing with experimental and computational evaluation of the deposition baffle that is transparent to radio frequency (RF) magnetic fields generated by an external antenna in an inductively coupled plasma (ICP) source but opaque to the deposition of the metal onto a dielectric wall in ionized physical vapor deposition (IPVD) system. Various engineering aspects related to the deposition baffle are discussed. Among the many requirements focus is on specific structure of the slots and analysis to minimize deposition on the baffle (we used a string model for simulating the profile evolution) and deposition through the DB on dielectric components of the ICP source. Transparency of the baffle to RF magnetic fields is computed using a three-dimensional (3D) electromagnetic field solver. A simple two-dimensional sheath model is used to understand plasma interactions with the DB slot structure. Performance and possible failure of device are briefly discussed.