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The Scientific World Journal
Volume 2013 (2013), Article ID 538297, 4 pages
http://dx.doi.org/10.1155/2013/538297
Research Article

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate

National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China

Received 25 October 2013; Accepted 24 November 2013

Academic Editors: W. Hu, S. Jit, and F. Yue

Copyright © 2013 Changda Zheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science, vol. 308, no. 5726, pp. 1274–1278, 2005. View at Publisher · View at Google Scholar · View at Scopus
  2. J. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: challenges and countermeasures,” Laser & Photonics Reviews, vol. 7, pp. 408–421, 2013. View at Google Scholar
  3. F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaNGaN light-emitting diodes on Si(001) substrate,” Applied Physics Letters, vol. 88, no. 12, Article ID 121114, 2006. View at Publisher · View at Google Scholar · View at Scopus
  4. A. Dadgar, C. Hums, A. Diez, F. Schulze, J. Bläsing, and A. Krost, “Epitaxy of GaN LEDs on large substrates: Si or sapphire?” in Proceedings of the Advanced LEDs for Solid State Lighting, pp. 63550R–63558R, Gwangju, South Korea, September 2006. View at Publisher · View at Google Scholar · View at Scopus
  5. C. Zheng, L. Wang, C. Mo et al., “Efficiency improvement of vertical structure GaN blue LEDs on Si(111) substrate by surface roughening,” Journal of Central South University of Technology, vol. 142, pp. 127–130, 2007. View at Google Scholar
  6. T. Chen, Y. Wang, P. Xiang et al., “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si(111) substrate onto electroplating copper submount with embedded electrodes,” Applied Physics Letters, vol. 100, Article ID 241112, 2012. View at Google Scholar
  7. C. D. Zheng, C. L. Mo, W. Q. Fang, and F. Y. Jiang, “Effect of the conduction type of Si(111) substrates on the performance of GaN MQW LED epitaxial films,” Advanced Materials Research, vol. 750, pp. 1029–1033, 2013. View at Google Scholar
  8. C. Mo, W. Fang, Y. Pu, H. Liu, and F. Jiang, “Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD,” Journal of Crystal Growth, vol. 285, no. 3, pp. 312–317, 2005. View at Publisher · View at Google Scholar · View at Scopus
  9. M. Senthil Kumar, J. Y. Park, Y. S. Lee, S. J. Chung, C.-H. Hong, and E.-K. Suh, “Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures,” Journal of Physics D, vol. 40, no. 17, pp. 5050–5054, 2007. View at Publisher · View at Google Scholar · View at Scopus
  10. S. J. Leem, Y. C. Shin, E. H. Kim et al., “Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method,” Semiconductor Science and Technology, vol. 23, no. 12, Article ID 125039, 2008. View at Publisher · View at Google Scholar · View at Scopus
  11. T. Langer, A. Kruse, F. A. Ketzer et al., “Origin of the “green gap”: increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures,” Physica Status Solidi (C), vol. 8, no. 7-8, pp. 2170–2172, 2011. View at Publisher · View at Google Scholar · View at Scopus
  12. J.-C. Lee and Y.-F. Wu, “Thermal effect of multi-quantum barriers within InGaN/GaN multi-quantum well light-emitting diodes,” Thin Solid Films, vol. 518, no. 24, pp. 7437–7440, 2010. View at Publisher · View at Google Scholar · View at Scopus
  13. S.-N. Lee, H. S. Paek, J. K. Son et al., “Surface modifications and optical properties of blue InGaN single quantum well by in-situ thermal treatments,” Physica Status Solidi (C), vol. 4, no. 1, pp. 141–144, 2007. View at Publisher · View at Google Scholar · View at Scopus
  14. Z. L. Li, P. T. Lai, and H. W. Choi, “A reliability study on green InGaN-GaN light-emitting diodes,” IEEE Photonics Technology Letters, vol. 21, no. 19, pp. 1429–1431, 2009. View at Publisher · View at Google Scholar · View at Scopus
  15. K. R. Kasarla, W. Chiang, R. Rahinu, and D. Korakakis, “Optimization of GaN barriers during the growth of InGaN/GaN quantum wells at low temperature,” in Proceedings of the Materials Research Society Symposium, pp. 43–48, December 2008. View at Scopus
  16. Y.-J. Lee, Y.-C. Chen, C.-J. Lee, C.-M. Cheng, S.-W. Chen, and T.-C. Lu, “Stable temperature characteristics and suppression of efficiency droop in InGaN green light-emitting diodes using pre-TMIn flow treatment,” IEEE Photonics Technology Letters, vol. 22, no. 17, pp. 1279–1281, 2010. View at Publisher · View at Google Scholar · View at Scopus
  17. Y. C. Shen, J. J. Wierer, M. R. Krames et al., “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Applied Physics Letters, vol. 82, no. 14, pp. 2221–2223, 2003. View at Publisher · View at Google Scholar · View at Scopus