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The Scientific World Journal
Volume 2013, Article ID 931980, 6 pages
Research Article

Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs

1Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China
2School of Remote Sensing, Nanjing University of Information Science and Technology, Nanjing 210044, China
3Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received 27 July 2013; Accepted 12 August 2013

Academic Editors: W. Hu, S. Jit, and F. Yue

Copyright © 2013 Chen-hui Yu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Chen-hui Yu, Qing-zhou Luo, Xiang-dong Luo, and Pei-sheng Liu, “Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices,” Journal of Nanomaterials, 2014. View at Publisher · View at Google Scholar
  • Włodzimierz Janke, and Wojciech Wojtasiak, “The basic properties and applications of gan hemt transistors,” Przeglad Elektrotechniczny, vol. 91, no. 9, pp. 65–73, 2015. View at Publisher · View at Google Scholar
  • Xue Rao, Ru-Zhi Wang, Jue-Xian Cao, and Hui Yan, “First-principles calculation of doped GaN/AlN superlattices,” Wuli Xuebao/Acta Physica Sinica, vol. 64, no. 10, 2015. View at Publisher · View at Google Scholar
  • C. H. Yu, X. Y. Chen, X. D. Luo, W. W. Xu, and P. S. Liu, “Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications,” Advances in Condensed Matter Physics, vol. 2015, pp. 1–6, 2015. View at Publisher · View at Google Scholar