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The Scientific World Journal
Volume 2014 (2014), Article ID 704830, 4 pages
Research Article

Valence Band Structure of and Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

1Department of Electronics and Communication Engineering, Heritage Institute of Technology, Chowbaga Road, Anandapur, Kolkata 700107, India
2Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009, India

Received 25 October 2013; Accepted 24 November 2013; Published 29 January 2014

Academic Editors: W. Hu, S. Jit, and F. Yue

Copyright © 2014 D. P. Samajdar and S. Dhar. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in and alloy systems. It is found that both the heavy/light hole, and spin-orbit split levels move upwards in energy with an increase in Bi content in the alloy, whereas the split energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.