Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 163-167

Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs

1lnstitut für Integrierte Systeme, ETH Zürich, Zürich CH-8092, Switzerland
2Bell Laboratories, 600 Mountain Avenue, Murray Hill 07974, NJ, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation. On the bulk level, the drift velocity at medium field strengths is still enhanced above Ge-contents of 20% in the substrate, where the low-field mobility is already saturated, while the saturation velocity remains unchanged under strain. In an n-MOSFET with a metallurgical channel length of 50nm, the saturation drain current is enhanced by up to 11%, but this maximum improvement is essentially already achieved at a Ge-content of 20% emphasizing the role of the low-field mobility as a key indicator of device performance in the deep-submicron regime.