Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics
Guest Editors: John Barker and Jeremy Watling- Guest Editorial, John Barker
Volume 13 (2001), Issue 1-4, Pages 1-2 - IWCE-7 Committees, John R. Barker and Asen Asenov
Volume 13 (2001), Issue 1-4, Pages 3-3 - Simulating Quasi-ballistic Transport
in Si Nanotransistors, Kausar Banoo, Jung-Hoon Rhew, Mark Lundstrom, Chi-Wang Shu, and Joseph W. Jerome
Volume 13 (2001), Issue 1-4, Pages 5-13 - Quantum Corrections to the ‘Atomistic’
MOSFET Simulations, A. Asenov, G. Slavcheva, S. Kaya, and R. Balasubramaniam
Volume 13 (2001), Issue 1-4, Pages 15-21 - Simulation of Optoelectronic Devices, Paolo Lugli, Fabio Compagnone, Aldo Di Carlo, and Andrea Reale
Volume 13 (2001), Issue 1-4, Pages 23-36 - Monte Carlo Calculations of Amplification Spectrum for GaN THz Transit-time Resonance Maser, E. Starikov, P. Shiktorov, V. Gruinskis, L. Reggiani, L. Varani, J. C. Vaissière, and Jian H. Zhao
Volume 13 (2001), Issue 1-4, Pages 37-43 - Numerical Studies of Miniband Conduction
in Quasi-One-Dimensional Superlattices, N. Mori, C. Hamaguchi, L. Eaves, and P. C. Main
Volume 13 (2001), Issue 1-4, Pages 45-50 - Cluster-based Parallel 3-D Monte Carlo
Device Simulation, Asim Kepkep, Umberto Ravaioli, and Brian Winstead
Volume 13 (2001), Issue 1-4, Pages 51-56 - Efficient Silicon Device Simulation with the Local
Iterative Monte Carlo Method, Jürgen Jakumeit, Torsten Mietzner, and Umberto Ravaioli
Volume 13 (2001), Issue 1-4, Pages 57-61 - Simplex Algorithm for Band Structure Calculation
of Noncubic Symmetry Semiconductors:
Application to III-nitride Binaries and Alloys, Enrico Ghillino, Carlo Garetto, Michele Goano, Giovanni Ghione, Enrico Bellotti, and Kevin F. Brennan
Volume 13 (2001), Issue 1-4, Pages 63-68 - Tight Binding Simulation of Quantum Transport
in Interband Tunneling Devices, Matsuto Ogawa, Ryuichiro Tominaga, and Tanroku Miyoshi
Volume 13 (2001), Issue 1-4, Pages 69-74 - Ultra-small MOSFETs: The Importance of the Full
Coulomb Interaction on Device Characteristics, W. J. Gross, D. Vasileska, and D. K. Ferry
Volume 13 (2001), Issue 1-4, Pages 75-78 - A Generalized Finite Element
Method for Hydrodynamic
Modeling of Short-channel Devices, Min Shen, Ming-C. Cheng, and J. J. Liou
Volume 13 (2001), Issue 1-4, Pages 79-84 - Langevin Forces and Generalized Transfer Fields for
Noise Modelling in Deep Submicron Devices, P. Shiktorov, E. Starikov, V. Gruzinskis, T. GonzáLez, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiére
Volume 13 (2001), Issue 1-4, Pages 85-90 - Self-consistent Full-band Modeling
of Quantum Semiconductor Nanostructures, Francesco Chirico, Aldo Di Carlo, and Paolo Lugli
Volume 13 (2001), Issue 1-4, Pages 91-95 - Numerical Simulation of Quantum Logic Gates
Based on Quantum Wires, A. Bertoni, P. Bordone, R. Brunetti, C. Jacoboni, and S. Reggiani
Volume 13 (2001), Issue 1-4, Pages 97-102 - 3D Modelling of Fluctuation Effects in Highly
Scaled VLSI Devices, Thomas D. Linton Jr., Shaofeng Yu, and Reaz Shaheed
Volume 13 (2001), Issue 1-4, Pages 103-109 - Impact of Scaling on CMOS Chip Failure Rate,
and Design Rules for Hot Carrier Reliability, Amr Haggag, William McMahon, Karl Hess, Björn Fischer, and Leonard F. Register
Volume 13 (2001), Issue 1-4, Pages 111-115 - Monte Carlo Modeling of Wurtzite and 4H Phase
Semiconducting Materials, K. F. Brennan, E. Bellotti, M. Farahmand, H.-E. Nilsson, P. P. Ruden, and Y. Zhang
Volume 13 (2001), Issue 1-4, Pages 117-124 - Hybrid Particle-based Full-band Analysis of Ultra-small MOS, S. J. Wigger, S. M. Goodnick, and M. Saraniti
Volume 13 (2001), Issue 1-4, Pages 125-129 - An Analytic Expression of Thermal Diffusion
Coefficient for the Hydrodynamic Simulation
of Semiconductor Devices, Ting-Wei Tang, Xinlin Wang, Haitao Gan, and Meikei Ieong
Volume 13 (2001), Issue 1-4, Pages 131-134 - Theoretical Investigation of Ultrathin
Gate Dielectrics, Alexander A. Demkov, Xiaodong Zhang, and Heather Loechelt
Volume 13 (2001), Issue 1-4, Pages 135-143 - Study of Electronic Transport in Tunneling
Devices Using an Incoherent Superposition
of Time Dependent Wave Packets, Xavier Oriols and Jordi Suñé
Volume 13 (2001), Issue 1-4, Pages 145-148 - Simulation of a Complete Chain of QCA Cells
with Realistic Potentials, M. Girlanda and M. Macucci
Volume 13 (2001), Issue 1-4, Pages 149-153 - Simulation at the Start of the New Millenium:
Crossing the Quantum-Classical Threshold, D. K. Ferry
Volume 13 (2001), Issue 1-4, Pages 155-161 - Strain-Dependence of Electron Transport in Bulk
Si and Deep-Submicron MOSFETs, F. M. Bufler, P. D. Yoder, and W. Fichtner
Volume 13 (2001), Issue 1-4, Pages 163-167 - Non-Equilibrium Hole Transport in Deep Sub-Micron
Well-Tempered Si p-MOSFETs, J. R. Watling, Y. P. Zhao, A. Asenov, and J. R. Barker
Volume 13 (2001), Issue 1-4, Pages 169-173 - Influence of Electron-Electron Interaction
on Electron Distributions in Short Si-MOSFETs
Analysed Using the Local Iterative
Monte Carlo Technique, T. Mietzner, J. Jakumeit, and U. Ravaioli
Volume 13 (2001), Issue 1-4, Pages 175-178 - Simulation of Biological Ionic Channels by Technology
Computer-Aided Design, K. Hess, U. Ravaioli, M. Gupta, N. Aluru, van der Straaten, and R. S. Eisenberg
Volume 13 (2001), Issue 1-4, Pages 179-187 - Analytic I–V Model for Single-Electron Transistors, Xiaohui Wang and Wolfgang Porod
Volume 13 (2001), Issue 1-4, Pages 189-192 - Design Optimization of Coulomb Blockade Devices, H.-O. Müller, D. A. Williams, and H. Mizuta
Volume 13 (2001), Issue 1-4, Pages 193-198 - A Fast Algorithm for the Study of Wave-packet
Scattering at Disordered Interfaces, J. R. Barker, J. R. Watling, and R. C. W. Wilkins
Volume 13 (2001), Issue 1-4, Pages 199-204 - Scattered Packet Method for the Simulation
of the Spatio-temporal Evolution of Local Perturbations, P. Gaubert, L. Varani, J. C. Vaissière, J. P. Nougier, E. Starikova, P. Shiktorov, and V. Gruzhinskis
Volume 13 (2001), Issue 1-4, Pages 205-209 - Wigner Paths Method in Quantum Transport
with Dissipation, P. Bordone, A. Bertoni, R. Brunetti, and C. Jacoboni
Volume 13 (2001), Issue 1-4, Pages 211-220 - Wigner Function Methods in Modeling of Switching
in Resonant Tunneling Devices, H. L. Grubin and R. C. Buggeln
Volume 13 (2001), Issue 1-4, Pages 221-227 - Quantum Monte Carlo Study of Silicon
Self-interstitial Defects, W.-K. Leung, R. J. Needs, G. Rajagopal, S. Itoh, and S. Ihara
Volume 13 (2001), Issue 1-4, Pages 229-235 - A Simple Model for the Quantum
Hydrodynamic Simulation of Electron
Transport in Quantum Confined Structures
in the Presence of Vortices, J. R. Barker
Volume 13 (2001), Issue 1-4, Pages 237-244 - Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing, K. Horio, Y. Mitani, A. Wakabayashi, and N. Kurosawa
Volume 13 (2001), Issue 1-4, Pages 245-249 - Optimization of FIBMOS Through 2D Silvaco
ATLAS and 2D Monte Carlo Particle-based
Device Simulations, J. Kang, X. He, D. Vasileska, and D. K. Schroder
Volume 13 (2001), Issue 1-4, Pages 251-256 - The Deterministic Circuit Model for Noise Influence
on the Averaged Transient Responses of Large-scale
Nonlinear ICs Analyzed with Itô's Stochastic
Differential Equations, Magnus Willander, Yevgeny Mamontov, and Jonathan Vincent
Volume 13 (2001), Issue 1-4, Pages 257-264 - Evaluation of an Equivalent Hole Effective Mass
for Si/SiGe Structures, Salvador Rodríguez, J. Banqueri, and J. E. Carceller
Volume 13 (2001), Issue 1-4, Pages 265-268 - Visualization of Large-scale Atomic Interactions
During the Melting and Crystallization Process, Roman Durikovic
Volume 13 (2001), Issue 1-4, Pages 269-271 - Simulation of Submicron Silicon Diodes
with a Non-Parabolic Hydrodynamical Model Based
on the Maximum Entropy Principle, O. Muscato and V. Romano
Volume 13 (2001), Issue 1-4, Pages 273-279 - Investigation of the Local Force
Approximation in Numerical Device
Simulation by Full-band
Monte Carlo Simulation, C. Jungemann, B. Neinhüs, and B. Meinerzhagen
Volume 13 (2001), Issue 1-4, Pages 281-285 - Hot Electron Modelling of HEMTs, Eric A. B. Cole, Christopher M. Snowden, and Shahzad Hussain
Volume 13 (2001), Issue 1-4, Pages 287-293 - Simulation of Widebandgap Multi-Quantum
Well Light Emitting Diodes, D. Oriato, Alison B. Walker, and W. N. Wang
Volume 13 (2001), Issue 1-4, Pages 295-299 - Monte Carlo Study of the Lateral Distribution
of Gate Current Density Along the Channel
of Submicron LDD MOSFET's, A. Harkar, R. W. Kelsall, and J. N. Ellis
Volume 13 (2001), Issue 1-4, Pages 301-304 - Electronic Transport in Self-organised Molecular
Nanostructured Devices, A. Pecchia, B. Movaghar, R. W. Kelsall, A. Bourlange, S. D. Evans, B. J. Hickey, and N. Boden
Volume 13 (2001), Issue 1-4, Pages 305-309 - Calculation of Transport Parameters
of SiO2 Polymorphs, Elena Gnani, Susanna Reggiani, Renato Colle, and Massimo Rudan
Volume 13 (2001), Issue 1-4, Pages 311-315 - Measurement and Simulation of Boron Diffusivity
in Strained Si1 –xGex Epitaxial Layers, K. Rajendran and W. Schoenmaker
Volume 13 (2001), Issue 1-4, Pages 317-321 - 2D-Hydrodynamic Energy Model Including
Avalanche Breakdown Phenomenon for Power
Field Effect Transistors, M. Rousseau and J. C. De Jaeger
Volume 13 (2001), Issue 1-4, Pages 323-328 - An Upstream Flux Splitting Method
for Hydrodynamic Modeling
of Deep Submicron Devices, Min Shen, Wai-Kay Yip, Ming-C. Cheng, and J. J. Liou
Volume 13 (2001), Issue 1-4, Pages 329-334 - Quantum Potential Approaches
for Nano-scale Device Simulation, Hideaki Tsuchiya, Brian Winstead, and Umberto Ravaioli
Volume 13 (2001), Issue 1-4, Pages 335-340 - Three-dimensional Spectral Solution
of Schrödinger Equation, A. Trellakis and U. Ravaioli
Volume 13 (2001), Issue 1-4, Pages 341-347 - Approximation of the BTE by a Relaxation-time
Operator: Simulations for a 50 nm-channel Si Diode, Marcello A. Anile, Jose A. Carrillo, Irene M. Gamba, and Chi-Wang Shu
Volume 13 (2001), Issue 1-4, Pages 349-354 - Two Dimensional MESFET Simulation
of Transients and Steady State with Kinetic
Based Hydrodynamical Models, A. M. Anile, S. F. Liotta, G. Mascali, and S. Rinaudo
Volume 13 (2001), Issue 1-4, Pages 355-361 - A Percolative Approach to Reliability of Thin Film
Interconnects and Ultra-thin Dielectrics, C. Pennetta, L. Reggiani, Gy. Trefán, R. Cataldo, and G. De Nunzio
Volume 13 (2001), Issue 1-4, Pages 363-367 - Quantum Transport Modeling of Current
Noise in Quantum Devices, Tanroku Miyoshi, Tetsuo Miyamoto, and Matsuto Ogawa
Volume 13 (2001), Issue 1-4, Pages 369-373 - Dynamical Equation and Monte Carlo Simulation
of the Two-time Wigner Function for Electron
Quantum Transport, R. Brunetti, A. Bertoni, P. Bordone, and C. Jacoboni
Volume 13 (2001), Issue 1-4, Pages 375-380 - Maximum Entropy Principle within A Total
Energy Scheme for Hot-carrier Transport
in Semiconductor Devices, M. Trovato and L. Reggiani
Volume 13 (2001), Issue 1-4, Pages 381-386 - Microscopic Modeling of GaN-based Heterostructures, F. Sacconi, F. Della Sala, A. Di Carlo, and Paolo Lugli
Volume 13 (2001), Issue 1-4, Pages 387-391 - Density-functional Based Tight-binding
Calculations on Thiophene Polymorphism, J. Widany, G. Daminelli, A. Di Carlo, and P. Lugli
Volume 13 (2001), Issue 1-4, Pages 393-397 - An lonised-impurity Scattering Model
for 3D Monte Carlo Device Simulation with Discrete
Impurity Distribution, S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martin, and J. E. Velázquez
Volume 13 (2001), Issue 1-4, Pages 399-404 - A Backward Monte Carlo Method for Simulation
of the Electron Quantum Kinetics in Semiconductors, M. Nedjalkov, H. Kosina, S. Selberherr, and I. Dimov
Volume 13 (2001), Issue 1-4, Pages 405-411 - Operation Principle of Resonant Tunneling
THz Oscillator at Fixed Bias Voltages, Peiji Zhao, H. L. Cui, D. Woolard, and Fliex Buot
Volume 13 (2001), Issue 1-4, Pages 413-417 - Detection of Quantum Cellular Automaton
Action in Silicon-on-insulator Cells, M. Gattobigio, M. Macucci, and G. Iannaccone
Volume 13 (2001), Issue 1-4, Pages 419-424 - Three-dimensional Statistical Modeling of the Effects
of the Random Distribution of Dopants
in Deep Sub-micron nMOSFETs, E. Amirante, G. Iannaccone, and B. Pellegrini
Volume 13 (2001), Issue 1-4, Pages 425-429 - Program, Erase and Retention Times
of Thin-oxide Flash-EEPROMs, G. Iannaccone and S. Gennai
Volume 13 (2001), Issue 1-4, Pages 431-434 - Scaling of pHEMTs to Decanano Dimensions, K. Kalna, A. Asenov, K. Elgaid, and I. Thayne
Volume 13 (2001), Issue 1-4, Pages 435-439 - Soft Sphere Model for Electron Correlation
and Scattering in the Atomistic Modelling
of Semiconductor Devices, J. R. Watling, J. R. Barker, and A. Asenov
Volume 13 (2001), Issue 1-4, Pages 441-446 - Dynamics of Non-equilibrium Short-wave-length
Phonons in Semiconductor Heterostructures, D. A. Romanov, J. Eizenkop, and V. V. Mitin
Volume 13 (2001), Issue 1-4, Pages 447-451 - Simulation of Enhanced Interface Trapping
Due to Carrier Dynamics in Warped Valence
Bands in SiGe Devices, J. R. Barker and J. R. Watling
Volume 13 (2001), Issue 1-4, Pages 453-458 - Simulation of 0.35 μm/0.25 μm CMOS
Technology Doping Profiles, M. Lorenzini, L. Haspeslagh, J. Van Houdt, and H. E. Maes
Volume 13 (2001), Issue 1-4, Pages 459-463