Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics
Guest Editors: John Barker and Jeremy Watling- Guest Editorial, John Barker
(Pages 1-2), Issue 1-4, Volume 13 (2001) - IWCE-7 Committees, John R. Barker and Asen Asenov
(Pages 3-3), Issue 1-4, Volume 13 (2001) - Simulating Quasi-ballistic Transport
in Si Nanotransistors, Kausar Banoo, Jung-Hoon Rhew, Mark Lundstrom, Chi-Wang Shu, and Joseph W. Jerome
(Pages 5-13), Issue 1-4, Volume 13 (2001) - Quantum Corrections to the ‘Atomistic’
MOSFET Simulations, A. Asenov, G. Slavcheva, S. Kaya, and R. Balasubramaniam
(Pages 15-21), Issue 1-4, Volume 13 (2001) - Simulation of Optoelectronic Devices, Paolo Lugli, Fabio Compagnone, Aldo Di Carlo, and Andrea Reale
(Pages 23-36), Issue 1-4, Volume 13 (2001) - Monte Carlo Calculations of Amplification Spectrum for GaN THz Transit-time Resonance Maser, E. Starikov, P. Shiktorov, V. Gruinskis, L. Reggiani, L. Varani, J. C. Vaissière, and Jian H. Zhao
(Pages 37-43), Issue 1-4, Volume 13 (2001) - Numerical Studies of Miniband Conduction
in Quasi-One-Dimensional Superlattices, N. Mori, C. Hamaguchi, L. Eaves, and P. C. Main
(Pages 45-50), Issue 1-4, Volume 13 (2001) - Cluster-based Parallel 3-D Monte Carlo
Device Simulation, Asim Kepkep, Umberto Ravaioli, and Brian Winstead
(Pages 51-56), Issue 1-4, Volume 13 (2001) - Efficient Silicon Device Simulation with the Local
Iterative Monte Carlo Method, Jürgen Jakumeit, Torsten Mietzner, and Umberto Ravaioli
(Pages 57-61), Issue 1-4, Volume 13 (2001) - Simplex Algorithm for Band Structure Calculation
of Noncubic Symmetry Semiconductors:
Application to III-nitride Binaries and Alloys, Enrico Ghillino, Carlo Garetto, Michele Goano, Giovanni Ghione, Enrico Bellotti, and Kevin F. Brennan
(Pages 63-68), Issue 1-4, Volume 13 (2001) - Tight Binding Simulation of Quantum Transport
in Interband Tunneling Devices, Matsuto Ogawa, Ryuichiro Tominaga, and Tanroku Miyoshi
(Pages 69-74), Issue 1-4, Volume 13 (2001) - Ultra-small MOSFETs: The Importance of the Full
Coulomb Interaction on Device Characteristics, W. J. Gross, D. Vasileska, and D. K. Ferry
(Pages 75-78), Issue 1-4, Volume 13 (2001) - A Generalized Finite Element
Method for Hydrodynamic
Modeling of Short-channel Devices, Min Shen, Ming-C. Cheng, and J. J. Liou
(Pages 79-84), Issue 1-4, Volume 13 (2001) - Langevin Forces and Generalized Transfer Fields for
Noise Modelling in Deep Submicron Devices, P. Shiktorov, E. Starikov, V. Gruzinskis, T. GonzáLez, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiére
(Pages 85-90), Issue 1-4, Volume 13 (2001) - Self-consistent Full-band Modeling
of Quantum Semiconductor Nanostructures, Francesco Chirico, Aldo Di Carlo, and Paolo Lugli
(Pages 91-95), Issue 1-4, Volume 13 (2001) - Numerical Simulation of Quantum Logic Gates
Based on Quantum Wires, A. Bertoni, P. Bordone, R. Brunetti, C. Jacoboni, and S. Reggiani
(Pages 97-102), Issue 1-4, Volume 13 (2001) - 3D Modelling of Fluctuation Effects in Highly
Scaled VLSI Devices, Thomas D. Linton Jr., Shaofeng Yu, and Reaz Shaheed
(Pages 103-109), Issue 1-4, Volume 13 (2001) - Impact of Scaling on CMOS Chip Failure Rate,
and Design Rules for Hot Carrier Reliability, Amr Haggag, William McMahon, Karl Hess, Björn Fischer, and Leonard F. Register
(Pages 111-115), Issue 1-4, Volume 13 (2001) - Monte Carlo Modeling of Wurtzite and 4H Phase
Semiconducting Materials, K. F. Brennan, E. Bellotti, M. Farahmand, H.-E. Nilsson, P. P. Ruden, and Y. Zhang
(Pages 117-124), Issue 1-4, Volume 13 (2001) - Hybrid Particle-based Full-band Analysis of Ultra-small MOS, S. J. Wigger, S. M. Goodnick, and M. Saraniti
(Pages 125-129), Issue 1-4, Volume 13 (2001) - An Analytic Expression of Thermal Diffusion
Coefficient for the Hydrodynamic Simulation
of Semiconductor Devices, Ting-Wei Tang, Xinlin Wang, Haitao Gan, and Meikei Ieong
(Pages 131-134), Issue 1-4, Volume 13 (2001) - Theoretical Investigation of Ultrathin
Gate Dielectrics, Alexander A. Demkov, Xiaodong Zhang, and Heather Loechelt
(Pages 135-143), Issue 1-4, Volume 13 (2001) - Study of Electronic Transport in Tunneling
Devices Using an Incoherent Superposition
of Time Dependent Wave Packets, Xavier Oriols and Jordi Suñé
(Pages 145-148), Issue 1-4, Volume 13 (2001) - Simulation of a Complete Chain of QCA Cells
with Realistic Potentials, M. Girlanda and M. Macucci
(Pages 149-153), Issue 1-4, Volume 13 (2001) - Simulation at the Start of the New Millenium:
Crossing the Quantum-Classical Threshold, D. K. Ferry
(Pages 155-161), Issue 1-4, Volume 13 (2001) - Strain-Dependence of Electron Transport in Bulk
Si and Deep-Submicron MOSFETs, F. M. Bufler, P. D. Yoder, and W. Fichtner
(Pages 163-167), Issue 1-4, Volume 13 (2001) - Non-Equilibrium Hole Transport in Deep Sub-Micron
Well-Tempered Si p-MOSFETs, J. R. Watling, Y. P. Zhao, A. Asenov, and J. R. Barker
(Pages 169-173), Issue 1-4, Volume 13 (2001) - Influence of Electron-Electron Interaction
on Electron Distributions in Short Si-MOSFETs
Analysed Using the Local Iterative
Monte Carlo Technique, T. Mietzner, J. Jakumeit, and U. Ravaioli
(Pages 175-178), Issue 1-4, Volume 13 (2001) - Simulation of Biological Ionic Channels by Technology
Computer-Aided Design, K. Hess, U. Ravaioli, M. Gupta, N. Aluru, van der Straaten, and R. S. Eisenberg
(Pages 179-187), Issue 1-4, Volume 13 (2001) - Analytic I–V Model for Single-Electron Transistors, Xiaohui Wang and Wolfgang Porod
(Pages 189-192), Issue 1-4, Volume 13 (2001) - Design Optimization of Coulomb Blockade Devices, H.-O. Müller, D. A. Williams, and H. Mizuta
(Pages 193-198), Issue 1-4, Volume 13 (2001) - A Fast Algorithm for the Study of Wave-packet
Scattering at Disordered Interfaces, J. R. Barker, J. R. Watling, and R. C. W. Wilkins
(Pages 199-204), Issue 1-4, Volume 13 (2001) - Scattered Packet Method for the Simulation
of the Spatio-temporal Evolution of Local Perturbations, P. Gaubert, L. Varani, J. C. Vaissière, J. P. Nougier, E. Starikova, P. Shiktorov, and V. Gruzhinskis
(Pages 205-209), Issue 1-4, Volume 13 (2001) - Wigner Paths Method in Quantum Transport
with Dissipation, P. Bordone, A. Bertoni, R. Brunetti, and C. Jacoboni
(Pages 211-220), Issue 1-4, Volume 13 (2001) - Wigner Function Methods in Modeling of Switching
in Resonant Tunneling Devices, H. L. Grubin and R. C. Buggeln
(Pages 221-227), Issue 1-4, Volume 13 (2001) - Quantum Monte Carlo Study of Silicon
Self-interstitial Defects, W.-K. Leung, R. J. Needs, G. Rajagopal, S. Itoh, and S. Ihara
(Pages 229-235), Issue 1-4, Volume 13 (2001) - A Simple Model for the Quantum
Hydrodynamic Simulation of Electron
Transport in Quantum Confined Structures
in the Presence of Vortices, J. R. Barker
(Pages 237-244), Issue 1-4, Volume 13 (2001) - Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing, K. Horio, Y. Mitani, A. Wakabayashi, and N. Kurosawa
(Pages 245-249), Issue 1-4, Volume 13 (2001) - Optimization of FIBMOS Through 2D Silvaco
ATLAS and 2D Monte Carlo Particle-based
Device Simulations, J. Kang, X. He, D. Vasileska, and D. K. Schroder
(Pages 251-256), Issue 1-4, Volume 13 (2001) - The Deterministic Circuit Model for Noise Influence
on the Averaged Transient Responses of Large-scale
Nonlinear ICs Analyzed with Itô's Stochastic
Differential Equations, Magnus Willander, Yevgeny Mamontov, and Jonathan Vincent
(Pages 257-264), Issue 1-4, Volume 13 (2001) - Evaluation of an Equivalent Hole Effective Mass
for Si/SiGe Structures, Salvador Rodríguez, J. Banqueri, and J. E. Carceller
(Pages 265-268), Issue 1-4, Volume 13 (2001) - Visualization of Large-scale Atomic Interactions
During the Melting and Crystallization Process, Roman Durikovic
(Pages 269-271), Issue 1-4, Volume 13 (2001) - Simulation of Submicron Silicon Diodes
with a Non-Parabolic Hydrodynamical Model Based
on the Maximum Entropy Principle, O. Muscato and V. Romano
(Pages 273-279), Issue 1-4, Volume 13 (2001) - Investigation of the Local Force
Approximation in Numerical Device
Simulation by Full-band
Monte Carlo Simulation, C. Jungemann, B. Neinhüs, and B. Meinerzhagen
(Pages 281-285), Issue 1-4, Volume 13 (2001) - Hot Electron Modelling of HEMTs, Eric A. B. Cole, Christopher M. Snowden, and Shahzad Hussain
(Pages 287-293), Issue 1-4, Volume 13 (2001) - Simulation of Widebandgap Multi-Quantum
Well Light Emitting Diodes, D. Oriato, Alison B. Walker, and W. N. Wang
(Pages 295-299), Issue 1-4, Volume 13 (2001) - Monte Carlo Study of the Lateral Distribution
of Gate Current Density Along the Channel
of Submicron LDD MOSFET's, A. Harkar, R. W. Kelsall, and J. N. Ellis
(Pages 301-304), Issue 1-4, Volume 13 (2001) - Electronic Transport in Self-organised Molecular
Nanostructured Devices, A. Pecchia, B. Movaghar, R. W. Kelsall, A. Bourlange, S. D. Evans, B. J. Hickey, and N. Boden
(Pages 305-309), Issue 1-4, Volume 13 (2001) - Calculation of Transport Parameters
of SiO2 Polymorphs, Elena Gnani, Susanna Reggiani, Renato Colle, and Massimo Rudan
(Pages 311-315), Issue 1-4, Volume 13 (2001) - Measurement and Simulation of Boron Diffusivity
in Strained Si1 –xGex Epitaxial Layers, K. Rajendran and W. Schoenmaker
(Pages 317-321), Issue 1-4, Volume 13 (2001) - 2D-Hydrodynamic Energy Model Including
Avalanche Breakdown Phenomenon for Power
Field Effect Transistors, M. Rousseau and J. C. De Jaeger
(Pages 323-328), Issue 1-4, Volume 13 (2001) - An Upstream Flux Splitting Method
for Hydrodynamic Modeling
of Deep Submicron Devices, Min Shen, Wai-Kay Yip, Ming-C. Cheng, and J. J. Liou
(Pages 329-334), Issue 1-4, Volume 13 (2001) - Quantum Potential Approaches
for Nano-scale Device Simulation, Hideaki Tsuchiya, Brian Winstead, and Umberto Ravaioli
(Pages 335-340), Issue 1-4, Volume 13 (2001) - Three-dimensional Spectral Solution
of Schrödinger Equation, A. Trellakis and U. Ravaioli
(Pages 341-347), Issue 1-4, Volume 13 (2001) - Approximation of the BTE by a Relaxation-time
Operator: Simulations for a 50 nm-channel Si Diode, Marcello A. Anile, Jose A. Carrillo, Irene M. Gamba, and Chi-Wang Shu
(Pages 349-354), Issue 1-4, Volume 13 (2001) - Two Dimensional MESFET Simulation
of Transients and Steady State with Kinetic
Based Hydrodynamical Models, A. M. Anile, S. F. Liotta, G. Mascali, and S. Rinaudo
(Pages 355-361), Issue 1-4, Volume 13 (2001) - A Percolative Approach to Reliability of Thin Film
Interconnects and Ultra-thin Dielectrics, C. Pennetta, L. Reggiani, Gy. Trefán, R. Cataldo, and G. De Nunzio
(Pages 363-367), Issue 1-4, Volume 13 (2001) - Quantum Transport Modeling of Current
Noise in Quantum Devices, Tanroku Miyoshi, Tetsuo Miyamoto, and Matsuto Ogawa
(Pages 369-373), Issue 1-4, Volume 13 (2001) - Dynamical Equation and Monte Carlo Simulation
of the Two-time Wigner Function for Electron
Quantum Transport, R. Brunetti, A. Bertoni, P. Bordone, and C. Jacoboni
(Pages 375-380), Issue 1-4, Volume 13 (2001) - Maximum Entropy Principle within A Total
Energy Scheme for Hot-carrier Transport
in Semiconductor Devices, M. Trovato and L. Reggiani
(Pages 381-386), Issue 1-4, Volume 13 (2001) - Microscopic Modeling of GaN-based Heterostructures, F. Sacconi, F. Della Sala, A. Di Carlo, and Paolo Lugli
(Pages 387-391), Issue 1-4, Volume 13 (2001) - Density-functional Based Tight-binding
Calculations on Thiophene Polymorphism, J. Widany, G. Daminelli, A. Di Carlo, and P. Lugli
(Pages 393-397), Issue 1-4, Volume 13 (2001) - An lonised-impurity Scattering Model
for 3D Monte Carlo Device Simulation with Discrete
Impurity Distribution, S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martin, and J. E. Velázquez
(Pages 399-404), Issue 1-4, Volume 13 (2001) - A Backward Monte Carlo Method for Simulation
of the Electron Quantum Kinetics in Semiconductors, M. Nedjalkov, H. Kosina, S. Selberherr, and I. Dimov
(Pages 405-411), Issue 1-4, Volume 13 (2001) - Operation Principle of Resonant Tunneling
THz Oscillator at Fixed Bias Voltages, Peiji Zhao, H. L. Cui, D. Woolard, and Fliex Buot
(Pages 413-417), Issue 1-4, Volume 13 (2001) - Detection of Quantum Cellular Automaton
Action in Silicon-on-insulator Cells, M. Gattobigio, M. Macucci, and G. Iannaccone
(Pages 419-424), Issue 1-4, Volume 13 (2001) - Three-dimensional Statistical Modeling of the Effects
of the Random Distribution of Dopants
in Deep Sub-micron nMOSFETs, E. Amirante, G. Iannaccone, and B. Pellegrini
(Pages 425-429), Issue 1-4, Volume 13 (2001) - Program, Erase and Retention Times
of Thin-oxide Flash-EEPROMs, G. Iannaccone and S. Gennai
(Pages 431-434), Issue 1-4, Volume 13 (2001) - Scaling of pHEMTs to Decanano Dimensions, K. Kalna, A. Asenov, K. Elgaid, and I. Thayne
(Pages 435-439), Issue 1-4, Volume 13 (2001) - Soft Sphere Model for Electron Correlation
and Scattering in the Atomistic Modelling
of Semiconductor Devices, J. R. Watling, J. R. Barker, and A. Asenov
(Pages 441-446), Issue 1-4, Volume 13 (2001) - Dynamics of Non-equilibrium Short-wave-length
Phonons in Semiconductor Heterostructures, D. A. Romanov, J. Eizenkop, and V. V. Mitin
(Pages 447-451), Issue 1-4, Volume 13 (2001) - Simulation of Enhanced Interface Trapping
Due to Carrier Dynamics in Warped Valence
Bands in SiGe Devices, J. R. Barker and J. R. Watling
(Pages 453-458), Issue 1-4, Volume 13 (2001) - Simulation of 0.35 μm/0.25 μm CMOS
Technology Doping Profiles, M. Lorenzini, L. Haspeslagh, J. Van Houdt, and H. E. Maes
(Pages 459-463), Issue 1-4, Volume 13 (2001)