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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 435-439

Scaling of pHEMTs to Decanano Dimensions

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • K Kalna, and A Asenov, “Nonequilibrium transport in scaled high electron mobility transistors,” Semiconductor Science and Technology, vol. 17, no. 6, pp. 579–584, 2002. View at Publisher · View at Google Scholar
  • K. Kalna, and A. Asenov, “Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions,” Solid-State Electronics, vol. 48, no. 7, pp. 1223–1232, 2004. View at Publisher · View at Google Scholar
  • A. J. García-Loureiro, K. Kalna, and A. Asenov, “Efficient three-dimensional parallel simulations of PHEMTs,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 18, no. 5, pp. 327–340, 2005. View at Publisher · View at Google Scholar
  • K. Kalna, K. Elgaid, I. Thayne, and A. Asenov, “Modelling of INP HEMTS with high indium content channels,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, vol. 2005, pp. 192–195, 2005. View at Publisher · View at Google Scholar