VLSI Design

VLSI Design / 2001 / Article
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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 |Article ID 028105 | https://doi.org/10.1155/2001/28105

M. Lorenzini, L. Haspeslagh, J. Van Houdt, H. E. Maes, "Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles", VLSI Design, vol. 13, Article ID 028105, 5 pages, 2001. https://doi.org/10.1155/2001/28105

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

Abstract

A careful calibration of a continuum process simulator is normally required to achieve a good agreement between simulated results and experimental dopant profiles. However, the validity of such a calibration procedure is often limited to a particular technology. By taking into account a number of physics-based models and experimental results available in literature, the predicting capability of the process simulation has been conveniently improved. In particular, this paper shows how concentration-depth profiles from two different CMOS technologies have been successfully reproduced with a unique set of fitting parameters.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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