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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 459-463

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles

IMEC-Interuniversity Microelectronics Centre, Kapeldreef 75, Heverlee B-3001, Belgium

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. Lorenzini, L. Haspeslagh, J. Van Houdt, and H. E. Maes, “Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles,” VLSI Design, vol. 13, no. 1-4, pp. 459-463, 2001. doi:10.1155/2001/28105