Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 251-256

Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations

Department of Electrical Engineering, Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • I. Knezevic, D.Z. Vasileska, and D.K. Ferry, “Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET,” IEEE Transactions on Electron Devices, vol. 49, no. 6, pp. 1019–1026, 2002. View at Publisher · View at Google Scholar
  • D A Fixel, and W N G Hitchon, “Kinetic investigation of electron–electron scattering in nanometer-scale metal- oxide-semiconductor field-effect transistors,” Semiconductor Science and Technology, vol. 23, no. 3, pp. 035014, 2008. View at Publisher · View at Google Scholar