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VLSI Design
Volume 13, Issue 1-4, Pages 155-161
http://dx.doi.org/10.1155/2001/59871

Simulation at the Start of the New Millenium: Crossing the Quantum-Classical Threshold

Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [11 citations]

The following is the list of published articles that have cited the current article.

  • D.K. Ferry, R. Akis, and D. Vasileska, “Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices,” International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), pp. 287–290, . View at Publisher · View at Google Scholar
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