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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 301-304

Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's

1lnstitute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds LS2 9JT, UK
2MITEL Semiconductors, Plymouth, Devon PL6 7BQ, UK

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents the spatial distribution of hot electrons along the channel of a 0.35 micron MOSFET using the full band pseudopotential Monte Carlo simulator DAMOCLES. The important aspect of this investigation is the implementation of a rigorous statistical enhancement technique along the channel of the device, to probe the hot electrons generated along the channel. Simulations have been carried out for different bias points. The results clearly show that the probability of generating electrons with energies sufficient for injection into the oxide layer is significant only at the drain side of the device. It is also observed that the peak gate current occurs exactly just inside the LDD region coincident with the position of maximum lateral electric field.