Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 301-304

Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's

1lnstitute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds LS2 9JT, UK
2MITEL Semiconductors, Plymouth, Devon PL6 7BQ, UK

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • G. Giusi, G. Iannaccone, M. Mohamed, and U. Ravaioli, “Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation,” IEEE Electron Device Letters, vol. 29, no. 11, pp. 1242–1244, 2008. View at Publisher · View at Google Scholar
  • G. Giusi, G. Iannaccone, and U. Ravaioli, “Time-dependent analysis of low V[sub DD] program operation in double-gate SONOS memories by full-band Monte Carlo simulation,” Journal of Applied Physics, vol. 106, no. 10, pp. 104506, 2009. View at Publisher · View at Google Scholar