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VLSI Design
Volume 13, Issue 1-4, Pages 301-304
http://dx.doi.org/10.1155/2001/61328

Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's

1lnstitute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds LS2 9JT, UK
2MITEL Semiconductors, Plymouth, Devon PL6 7BQ, UK

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. Harkar, R. W. Kelsall, and J. N. Ellis, “Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's,” VLSI Design, vol. 13, no. 1-4, pp. 301-304, 2001. https://doi.org/10.1155/2001/61328.