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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 15-21

Quantum Corrections to the ‘Atomistic’ MOSFET Simulations

Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, UK

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Antonio J. García-Loureiro, Karol Kalna, and Asen Asenov, “Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator,” 2007 Spanish Conference on Electron Devices, Proceedings, pp. 60–63, 2007. View at Publisher · View at Google Scholar
  • A. García-Loureiro, M. Aldegunde, N. Seoane, K. Kalna, and A. Asenov, “3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs,” Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09, pp. 200–203, 2009. View at Publisher · View at Google Scholar