VLSI Design

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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 |Article ID 067156 | https://doi.org/10.1155/2001/67156

J. R. Watling, J. R. Barker, A. Asenov, "Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices", VLSI Design, vol. 13, Article ID 067156, 6 pages, 2001. https://doi.org/10.1155/2001/67156

Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices

Abstract

As MOSFET devices within the deep sub-micron regime are modelled, it is no longer feasible to represent the charged dopants by a continuous charge distribution. In this regime an ensemble of devices, each with different spatial distributions and the number of dopants, must be modelled. However, it is computationally prohibitive to solve for the full Coulomb interaction required for particle simulators, especially for an ensemble of devices. To address this point, the paper focuses on the issue of modelling the dynamics in the presence of discrete carrier–carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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