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J. R. Barker, J. R. Watling, "Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices", VLSI Design, vol. 13, Article ID 070818, 6 pages, 2001. https://doi.org/10.1155/2001/70818
Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices
Much of the potential of SiGe for p-MOSFET application is reduced by the lower than expected hole mobilities which are likely to be lowered by interface roughness scattering. The present paper analyses a hitherto unrecognised enhancement of interface scattering and trapping process which arises from the complex hole dynamics in the warped heavy hole band.
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