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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 335-340

Quantum Potential Approaches for Nano-scale Device Simulation

1Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
23255 Beckman Institute, University of Illinois, 405 North Mathews Avenue, Urbana, IL 61801, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


With the progress of integrated technology, the feature size of experimental electron devices have already been scaled down deeply into the sub–0.1 μm region. For such ultra-small devices, it is increasingly important to take quantum mechanical effects into account for device simulation. In this paper, we present a new approach for quantum modeling, applicable to multi-dimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum effects such as tunneling and quantum confinement effects can be incorporated in the standard Monte Carlo techniques.