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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 75-78

Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics

1lntel Corp., Chandler, AZ 85226, USA
2Department of Electrical Engineering, Center for Solid State, Electronics Research Arizona State University, Tempe, AZ 85287-5706, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range ee and e–i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.