Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 355-361
http://dx.doi.org/10.1155/2001/81481

Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models

1Dipartiento di Matematica e Informatica, University of Catania, Viale A. Doria 6, Catania 95125, Italy
2ST Microelectronics, Stradale Primosole 50, Catania 95121, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

A. M. Anile, S. F. Liotta, G. Mascali, and S. Rinaudo, “Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models,” VLSI Design, vol. 13, no. 1-4, pp. 355-361, 2001. https://doi.org/10.1155/2001/81481.