Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 85-90
http://dx.doi.org/10.1155/2001/82542

Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices

1Semiconductor Physics Institute, Vilnius, Lithuania
2Universidad de Salamanca, Salamanca, Spain
3Università di Lecce, Lecce, Italy
4Université Montpellier II, Montpellier Cedex 5 34095, France
5Semiconductor Physics Institute, Goshtauto 11, Vilnius 2600, Lithuania

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

P. Shiktorov, E. Starikov, V. Gruzinskis, et al., “Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices,” VLSI Design, vol. 13, no. 1-4, pp. 85-90, 2001. https://doi.org/10.1155/2001/82542.