VLSI Design

VLSI Design / 2001 / Article
Special Issue

Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

View this Special Issue

Open Access

Volume 13 |Article ID 089617 | https://doi.org/10.1155/2001/89617

M. Trovato, L. Reggiani, "Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices", VLSI Design, vol. 13, Article ID 089617, 6 pages, 2001. https://doi.org/10.1155/2001/89617

Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

Abstract

By extending the maximum entropy principle within a scheme in total average energy we obtain a closed system of hydrodynamic equations for a full nonparabolic band model in which all the unknown constitutive functions are completely determined. The theory is validated by comparing hydrodynamic calculations with Monte Carlo simulations performed for bulk and submicron Si structures at 300 K. In the general framework of the moment theory a systematic study of small-signal response functions is provided.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views146
Downloads411
Citations

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.