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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 125-129

Hybrid Particle-based Full-band Analysis of Ultra-small MOS

1Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, USA
2Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL 60616-3793, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.