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VLSI Design
Volume 13, Issue 1-4, Pages 399-404
http://dx.doi.org/10.1155/2001/96951

An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution

1lnstitut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Bâtiment 220, Orsay cedex F-91405, France
2Dpto. De Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, Salamanca 37008, Spain

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martin, and J. E. Velázquez, “An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution,” VLSI Design, vol. 13, no. 1-4, pp. 399-404, 2001. https://doi.org/10.1155/2001/96951.