Table of Contents
VLSI Design
Volume 2010, Article ID 864165, 8 pages
http://dx.doi.org/10.1155/2010/864165
Research Article

Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance

1Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA 70803-5901, USA
2Electronics Foundations Group, AFRL/VSSE, 3550 Aberdeen Avenue SE, Kirtland AFB, NM 87117, USA

Received 1 June 2009; Accepted 19 November 2009

Academic Editor: Gregory D. Peterson

Copyright © 2010 Yao Xu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Current transport and dynamic models of carbon nanotube field-effect transistors are presented. A model of single-walled carbon nanotube as interconnect is also presented and extended in modeling of single-walled carbon nanotube bundles. These models are applied in studying the performances of circuits such as the complementary carbon nanotube inverter pair and carbon nanotube as interconnect. Cadence/Spectre simulations show that carbon nanotube field-effect transistor circuits can operate at upper GHz frequencies. Carbon nanotube interconnects give smaller delay than copper interconnects used in nanometer CMOS VLSI circuits.