Thermal analysis during the design process is an essential step towards the achievement of high reliabilityin modern high density hybrid and integrated circuits. Thermal analysis is also essential for modern,high density PCBs. Traditionally, a solution of the thermal problem is obtained by either the methodof finite differences or the method of finite elements. Both methods, however, require a fine 3-Dpartition of the substrate, leading to large systems of linear equations the solution of which demandssubstantial computing power provided by number crunching machines and/or powerful computer work-stations.The widespread use of personal computers, however, dictates the development of new approachesto the thermal problems so that a design engineer can solve them in reasonable time with a PC. A newtreatment of steady-state thermal analysis combined with a layout editor is proposed in this paper,which makes use of the analytical solution for the temperature distribution in a single-layer substratewith heat sources on the surface, and having an isothermal bottom surface. In this way the mathematicalcomplexity of the problem is dramatically reduced allowing the thermal analysis of Multi Chip Modules(M.C.M.s) and complex hybrid circuits with the use of a PC/XT or compatible.

J. N. Avaritsiotis

G.  Eleftheriades

Layout and Thermal Analysis of PowerDevices Using a PC/XC

Fast silver ion conducting glasses as electrochemical devices have been tested. A silver iodine battery
using a silver ionic conducting glass (AgPO3-Ag2S-AgI) has been studied. The interaction of some gases
(O2 CI2, H2S) with the electrochemical chains: Pt/Sb2S3-AgI (glass)/Ag and Pt/AgCl (thin film)/Sb2S3-
AgI (glass)/Ag has been investigated. Finally, the behavior of thin films of Ag2S3-Ag2S-CdS glasses as
sensitive membranes for Cd detection in solution has been tested on MIS structures Au/Si/SiO2/
Membrane/Cd in solution/Reference electrode.

Liu Jun

J. Portier

B. Tanguy

J. J. Videau

M. Ait Allal

J. Morcos

J. Salardenne

Application of Silver Conducting Glasses to Solid State Batteries and Sensors

A Technology file for the Magic layout editor has been developed in order to enable thick film circuitdesigners to evolve fast solutions for layout with design rule checking, and plotting of the masks ofmultilayer hybrid circuits. The hybrid design system developed provides for device placement, andautomatic routing techniques, in thick film circuits. Device placement is done by recalling from thelibrary the pad pattern that corresponds to the device to be positioned. Automatic routing is implementednot only in multilayered circuits but also in single-layer technology (i.e. two possible types of metalrouted on the bare substrate) where dielectric tiles are automatically created at metal crossings, whenan electric contact is not desired.

Thick Film Circuit Layout and Extraction of Parameters Using The Magic Layout Editor

By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated
circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent
circuit models are developed. Also, the high frequency behaviour is explained by a model and the
behaviour of a T-MOSFET under different conditions is given.

Ranbir Singh

Improvement of Mosfet Characteristics

Transparent and conductive films of SrTiO3 , ITO, and Tl2O3 have been deposited by R.F. cathodic sputtering and by anodic oxidation onto Si substrates in order to realize SIS cells. A photoconversion efficiency of 8.8&#x25; has been obtained for Si/SiOx/Tl2O3 cells. On the other hand for Si/SiOx/SrTiO3(ITO) the photoconversion efficiency is lower than 1&#x25; because of the too large thickness of the SiOx interfacial layer.

G. Campet

Z. W. Sun

P. Keou

Realization of Solar Cells Based on Silicon/Oxide Junctions

A sensing element for true RMS meter was realized in thick film technology. The temperature gradient along
a substrate was measured by thick film thermocouples, based on a combination of Pt/Ag-Pd/Ag, Pt/Au-Au and
Ni-Cr. A voltage response of the element was measured as a function of the current through the heating resistor
at different ambient temperatures. The transfer function K(T) of the RMS meter was found to be relatively
independent of ambient temperature, which means that the voltage response is usably linear.

Marko Hrovat

Miran Zgonik

Darko Belavic

A Thick Film Sensing Element for True RMS Meter

Circular, plate, radial and coaxial arrangements for phases of double circuit transmission lines are proposed.Power transmission over long distances depends on the mutual effect between each two respective phases. Atheoretical analysis for voltage, power and current along such lines is presented. The general constants for eachconfiguration are evaluated, as well as the maximum power limit for long distance double circuit transmissionlines. Different voltage levels of 500 and 1000 kV are considered for a length of 1000 km. An externalimpedance is suggested to be connected at various points of coaxial arrangement with separate phases. Thecapacitive effect for such an external impedance is studied.

M.  Hamed

The Transmission of Bulk Power Over Long Distances

This paper presents a new idea for the radial type transmission line with external reactive forcing impedanceat only the receiving end. The general constants of such line are deduced. The effect of both capacitive andinductive forcing impedances on the steady-state performance of the proposed line are studied. The maximumreceived power for a 1000 km line with capacitive forcing impedance is formulated. The rating of the suggested1 k Ohm forcing capacitor for a 1000 km line is computed.

The Electrical Characteristics of Long Transmission Lines With External Forcing Impedance

By calculating the effects of electronic scattering at rough surfaces by means of a combined Soffer-Cotteymodel, general theoretical expressions for the size effects in thermal properties of thin metal films are proposed.Simple analytical expressions for the thermoelectric power, Sf, and the thermal conductivity, &#8466;f, are givenunder the assumption that the energy dependence of the electronic relaxation time in bulk material may bewritten in the form <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>&#x03C4;</mml:mtext><mml:mtext>o</mml:mtext></mml:msub><mml:mo>&#x223C;</mml:mo><mml:msup><mml:mtext>W</mml:mtext><mml:mtext>m</mml:mtext></mml:msup></mml:math>. The size effects in the thermoelectric power are found to depend on the valueof m. However, a decrease in the overall size effects is observed in all transport parameters with respect tothe predictions of classical theories based on the Fuchs-Sondheimer or the Cottey models. A comparison withdata on the thermoelectric power of thin copper, silver and tin films from previous experiments by variousworkers shows that a combined Soffer-Cottey model is convenient to analyze size effects in thermoelectricproperties. The values of the r.m.s, surface roughness obtained from data are physically consistent.

C. R. Tellier

Size Effects on Thermal Properties ofThin Metal Films With Rough Surfaces

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

Active and Passive Electronic Components