We have prepared screen-printed films of the Y-Ba-Cu-O compound starting from a spray-pyrolysis
precursor powder. BeO ceramic substrates are confirmed to be inert with respect to the film up to
about 1000ºC. Electrical properties of oxygen annealed films are investigated, evidencing excellent
superconducting behaviour, both in terms of <mml:math id="E1" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>T</mml:mtext><mml:mtext>c</mml:mtext></mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mo>≃</mml:mo><mml:mn>91</mml:mn><mml:mtext>K</mml:mtext></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:math>
 and Jc (&gt;102 A.cm-2 at 77 K).

Maurizio Sacchi

Fausto Sirotti

Bruno Morten

Maria Prudenziati

Superconducting Thick-Films From a Y-Ba-Cu-O Precursor

The size effect, namely the change of sheet resistance, Rs as a function of resistor length, has
been investigated in layers whose conductive phase evolves from Pb-rich (Ru-deficient pyrochlores) to
Pb2Ru2O6.5 and finally to RuO2 by increasing the firing temperature. It is found that Bi diffusion from
the terminations is responsible for lower sheet resistance values in shorter resistors whatever the conductive
phase is. On the contrary, Ag diffusion is responsible for lower sheet resistance values in shorter
resistors only in the case of ruthenate conductive grains while the reverse is observed in RuO2-based
layers. Size effect can be suppressed with Pt/Au-based terminations provided that no Bi is contained
and with Au-metallorganic-based contact provided that the peak firing temperature is not too high.

M. Prudenziati

F. Sirotti

M. Sacchi

B. Morten

A. Tombesi

T. Akomolafe

Size Effects in Ruthenium-Based Thick-Film Resistors: Rutile vs. Pyrochlore-Based Resistors

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence
of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical
measurements were performed between 95 and 600 K. Free carriers concentration in the film were
measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts
allowing to simplify Manifacier method.Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.

G. Campet

C. Geoffroy

S. J. Wen

J. Portier

P. Keou

J. Salardenne

Z. W. Sun

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films
Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

Umesh Kumar

Accurate Single-Section Model of Mosfet Including Substrate Resistivity

In this paper the results of miniature thick film resistors designed as add-on lumped resistors arepresented. A few resistor configurations have been elaborated and tested, and a specific trimmingresistance, which avoids parasitic trimming inductance was used. Some of the designed resistors wereused in isolators and directional couplers for the 2-11 GHz band. The electrical parameters have beenpresented and discussed. The assembly methods for these resistors to the microstrip lines have alsobeen given.

Zbigniew  Szczepa&#324;ski

Miniature Thick Film Resistors forMicrowave Integrated Circuits

Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using
different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or
SnO2–SnF2 mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2 slurry or a suspension
of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which
the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The
optical and electrical properties of the obtained thin films have been studied and compared to those of
the films obtained by spray technique.

F. Menil

G. Couturier

Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

Active and Passive Electronic Components