This study presents a dynamic amplifier with high energy efficiency and high gain suitable for a delta-sigma modulator based on the floating-inverter amplifier (FIA), in-depth analysis of the existing FIA and its improved structure, and simulation verification. Compared with other FIA structures, the proposed amplifier has a better compromise in terms of power consumption and stability, which was designed and simulated using the SMIC 180 nm CMOS technology. Under a 1.2 V power supply, the closed-loop direct current (DC) gain and the output swing were about 104 dB and ±380 mV, respectively, and the input-referred in-band noise was about −100 dB with the chopper circuit.

Jinze Lai

Yuxuan Lin

Gumeng Zhao

Lijie Huang

Cong Wei

Rongshan Wei

Wei Hu

Analysis and Design of High-Energy-Efficiency Amplifiers for Delta-Sigma Modulators

An improved method of extracting small-signal equivalent circuit model parameters for gallium nitride high electron mobility transistors (GaN HEMTs) is presented. This paper intends to present a method to extract the parasitic inductance and resistance of transistors based on the short-test structure without the open-circuit test structure. The parasitic capacitance of transistors is extracted by the method based on the size scalable model. Compared with the traditional COLD-FET method, the extraction procedure is simpler and more convenient. After removing the influence of parasitic elements, the intrinsic parameters of the model can be extracted by the S-parameters measured at different bias points. The experimental results show that the simulation results have good agreement with the measured results in the range of 0.5∼110 GHz.

Qingyu Yuan

Jinze Tang

Xiaodong Luan

Xin Lin

Fan Chang

Jiali Cheng

An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure

With the percentage of embedded SRAM increasing in SoC chips, low-power design such as the near-threshold SRAM technique are getting increasing attention to reduce the entire chip energy consumption. However, the descending operating voltage will lead to longer write latency and a higher failure rate. In this paper, we present a novel low Vth ultradynamic voltage scaling (UDVS) 9T subthreshold SRAM cell to improve the write ability of SRAM cells. The proposed Low Vth UDVS SRAM cell is demonstrated with a low threshold voltage speed-up transistor and an ultradynamic voltage scaling circuit implemented in 16 nm low-leakage CMOS technology. This wide supply range was made possible by a combination of circuits optimized for both subthreshold and abovethreshold regimes. This write assist technique can be operated selectively to provide write capability at very low voltage levels while avoiding excessive power overhead. The simulation findings reveal that with 16 nm technology, the write ability is improved by 33% over the normal case at 0.9 V supply voltage.

Uma Maheshwar Janniekode

Rajendra Prasad Somineni

A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications

This work presents the performance and stability analysis of the proposed built-in self-read and write assist 10T SRAM (BSRWA 10T) for better performance in terms of thermal stability and fast write access, which is suitable for military and aerospace applications. The performance of the proposed SRAM cell dominates the previous SRAM cells, i.e., conventional, fully differential 10T-ST (FD 10T-ST), single stacked disturbance-free 9T-ST (SSDF 9T-ST). The proposed SRAM cell dominates the SSDF 9T-ST SRAM cell in terms of write ability. The built-in self-read and write assist structure of the memory cell also dominates the improved write ability of SSDF 9T-ST SRAM by assist circuits such as negative bit line, ultra-dynamic voltage scaling (UDVS), write assist combining negative BL, and VDD collapse. The impact of assist circuits on write performance of memory cells is observed using Monte Carlo simulation for write margin (WM) parameter. WM of SSDF 9T-ST SRAM is improved by 15% and 25% by adding UDVS assist circuit and write assist combining negative BL and VDD collapse circuit. But BSRWA SRAM cell itself can improve WM by 32% without any assist circuit. The impact of temperature variation on the performance of memory cells is observed using Monte Carlo simulation for the HSNM parameter. The deviation of HSNM for 15°C to 55°C is 14%, 5%, 4%, and 1% in conventional SRAM cell, FD 10T SRAM cell, SSDF 9T SRAM cell, and proposed BSRWA 10T SRAM cell, respectively. The proposed SRAM cell is designed at a 22 nm CMOS technology node and verified in the Synopsys Custom compiler. MC simulation results are monitored on Synopsys Cosmo-scope wave viewer.

Chokkakula Ganesh

Fazal Noorbasha

Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell

Combining with a static random-access memory (SRAM) and resistive memory (RRAM), an improved 8T2R nonvolatile SRAM (nvSRAM) memory cell is proposed in this study. With differential mode, a pair of 1T1R RRAM is added to 6T SRAM storage node. By optimizing the connection and layout scheme, the power consumption is reduced and the data stability is improved. The nvSRAM memory cell is realized with UMC CMOS 28 nm 1p9m process. When the power supply voltage is 0.9 V, the static noise/read/write margin is 0.35 V, 0.16 V, and 0.41 V, respectively. The data storage/restoration time is 0.21 ns and 0.18 ns, respectively, with an active area of 0.97 μm2.

Jiayu Yin

Wenli Liao

Chengying Chen

A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

This study presents a survey of the most promising reported SAR ADC designs for biomedical applications, stressing advantages, disadvantages, and limitations, and concludes with a quantitative comparison. Recent progress in the development of a single SAR ADC architecture is reviewed. In wearable and biosensor systems, a very small amount of total power must be devoured by portable batteries or energy-harvesting circuits in order to function correctly. During the past decade, implementation of the high energy efficiency of SAR ADC has become the most necessary. So, several different implementation schemes for the main components of the SAR ADC have been proposed. In this review study, the various circuit architectures have been explained, beginning with the sample and hold (S/H) switching circuits, the dynamic comparator, the internal digital-to-analog converter (DAC), and the SAR control logic. In order to achieve low power consumption, numerous different configurations of dynamic comparator circuits are revealed. At the end of this overview, the evolutions of DAC architecture in distinct biomedical applications today can make a tradeoff between resolution, speed, and linearity, which represent the challenges of a single SAR ADC. For high resolution, the dual split capacitive DAC (CDAC) array technique and hybrid capacitor technique can be used. Also, for ultralow power consumption, various voltage switching schemes are achieved to reduce the number of switches. These schemes can save switching energy and reduce capacitor array area with high linearity. Additionally, to increase the speed of the conversion process, a prediction-based ADC design is employed. Therefore, SAR ADC is considered the ideal solution for biomedical applications.

Kawther I. Arafa

Dina M. Ellaithy

Abdelhalim Zekry

Mohamed Abouelatta

Heba Shawkey

Successive Approximation Register Analog-to-Digital Converter (SAR ADC) for Biomedical Applications

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

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Active and Passive Electronic Components provides a forum for the science and technology of all types of electronic components, and publishes experimental and theoretical papers on topics such as transistors, hybrid circuits and sensors.

Active and Passive Electronic Components