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Advances in Condensed Matter Physics
Volume 2015, Article ID 714097, 5 pages
http://dx.doi.org/10.1155/2015/714097
Research Article

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Institute of Microelectronics, Peking University, Beijing 100871, China

Received 22 January 2015; Accepted 15 February 2015

Academic Editor: Rui Zhang

Copyright © 2015 Lifeng Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, and Yi Wang, “Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices,” Advances in Condensed Matter Physics, vol. 2015, Article ID 714097, 5 pages, 2015. https://doi.org/10.1155/2015/714097.