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Research Letters in Materials Science
Volume 2008 (2008), Article ID 312057, 4 pages
Research Letter

Structural Characteristics and Crystallization of Metallic Glass Sputtered Films by Using Zr System Target

1Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaragi, Osaka 567-0047, Japan
2Topy Industries Ltd., 830 Yahata, Chigasaki, Kanagawa 253-8650, Japan
3Advanced Research Center of Metallic Glasses, Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Received 27 August 2008; Accepted 4 November 2008

Academic Editor: Markku Leskela

Copyright © 2008 Katsuyoshi Kondoh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Zr-Al-Ni-Cu thin films were deposited by the radio-frequency sputtering method at low substrate temperature using three kinds of targets: Z r 5 5 A l 1 0 N i 5 C u 3 0 bulk metallic glass target ( 𝛼 -BMG target), crystallized bulk metallic glass target (c-BMG target), and an elemental composite target composed of each Zr, Al, Ni chips, and Cu plate. XRD profiles of the films prepared when using these targets indicated that all of the films showed amorphous structures. While XRD profiles of the films using 𝛼 - and c-BMG targets revealed a broad peak of 2 𝜃 = 3 8 degree in the same way as the 𝛼 -BMG target indicating amorphous structures, that of the film using elemental composite targets showed a broad peak of 2 𝜃 = 4 2 degree, which is higher compared to the latter material. As a result of annealing the films at various temperatures for 900 seconds, the film using the 𝛼 -BMG target showed a crystallization temperature of 748 K, higher than that of BMG with 723 K, while the other films had lower crystallization temperatures below 723 K. XRD profiles also indicated that the crystallized compounds of the films were different from those of BMG target.