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Research Letters in Materials Science
Volume 2008, Article ID 643743, 4 pages
http://dx.doi.org/10.1155/2008/643743
Research Letter

The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure

1Solid State Physics Department, National Research Center (NRC), Dokki, 12332 Cairo, Egypt
2IV. Physics Institute, University of Göttingen, Friedrich-Hund Platz 1, 37077 Göttingen, Germany
3Department of Physics and Astronomy, University of California, Los Angeles, CA 90024, USA

Received 15 August 2007; Accepted 21 January 2008

Academic Editor: Jeffrey T. Glass

Copyright © 2008 M. Boshta et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

M. Boshta, V. Morchshakov, K. Bärner, and R. Braunstein, “The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure,” Research Letters in Materials Science, vol. 2008, Article ID 643743, 4 pages, 2008. https://doi.org/10.1155/2008/643743.