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Advances in Materials Science and Engineering
Volume 2009, Article ID 309209, 3 pages
http://dx.doi.org/10.1155/2009/309209
Research Article

Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms

Department of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan

Received 2 September 2009; Accepted 13 November 2009

Academic Editor: Richard Hennig

Copyright © 2009 Koji Sueoka et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Koji Sueoka, Ken Kamimura, and Seiji Shiba, “Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms,” Advances in Materials Science and Engineering, vol. 2009, Article ID 309209, 3 pages, 2009. https://doi.org/10.1155/2009/309209.