Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms

<table>Calculated binding energy <svg height="15.4" id="M41" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 17.075001 15.4" width="17.075001" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M609 650l-19 -162l-30 -2q2 69 -14 94q-9 18 -28.5 26t-74.5 8h-88q-30 0 -37 -6.5t-12 -36.5l-41 -212h103q48 0 69 5.5t32 19t26 50.5h29l-40 -198h-30q2 58 -11.5 70.5t-85.5 12.5h-99l-30 -167q-17 -87 3 -101q18 -15 111 -15q59 0 89 7t54 27q8 7 15.5 16t16 21.5
l14 20.5t15 23.5t13.5 21.5l29 -10q-52 -129 -71 -163h-500l6 28q66 4 83 17.5t28 73.5l77 409q11 61 -0.5 75.5t-78.5 18.5l10 28h467z" id="x1D438"></path></g>
<g transform="matrix(.012,-0,0,-.012,10.8,15.187)"><path d="M452 333q0 -82 -46 -164t-116 -128q-81 -53 -158 -53q-26 0 -51 13t-37 32q-26 41 -6 134l91 431q7 40 2.5 47t-34.5 7h-33l2 25q36 4 72.5 13t58.5 15.5t28 6.5q10 0 4 -29l-91 -391h2q65 77 130 116.5t105 39.5q36 0 56.5 -32t20.5 -83zM365 316q0 76 -35 76
q-31 0 -93.5 -49t-107.5 -110q-12 -37 -17 -70q-9 -65 12 -96.5t59 -31.5q31 0 56 14q53 29 89.5 105t36.5 162z" id="x1D44F"></path></g>
</svg> of  <svg height="7.9499998" id="M42" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 8.6625004 7.9499998" width="8.6625004" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,7.675)"><path d="M495 86q-46 -47 -87 -72.5t-63 -25.5q-43 0 -16 107l49 210q7 34 8 50.5t-3 21t-13 4.5q-35 0 -109.5 -72.5t-115.5 -140.5q-21 -75 -38 -159q-50 -10 -76 -21l-6 8l84 340q8 35 -4 35q-17 0 -67 -46l-15 26q44 44 85.5 70.5t64.5 26.5q35 0 10 -103l-24 -98h2
q42 56 97 103.5t96 71.5q46 26 74 26q9 0 16 -2.5t14 -11.5t9.5 -24.5t-1 -44t-13.5 -68.5q-30 -117 -47 -200q-4 -19 -3.5 -25t6.5 -6q21 0 70 48z" id="x1D45B"></path></g>
</svg>-type dopants to 4th element impurity atoms.</table>

Advances in Materials Science and Engineering

fig3

Figure 3

Figure 3: Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms 