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Advances in Materials Science and Engineering
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Advances in Materials Science and Engineering
/
2009
/
Article
/
Tab 2
/
Research Article
Systematic Investigation of Gettering Effects on 4th Row Element Impurities in Si by Dopant Atoms
Table 2
Calculated binding energy
of P
, As
, Sb
to Cu.
Formed Complex
ā(eV)
P
1.34
As
1.25
Sb
1.09