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Advances in Materials Science and Engineering
Volume 2010, Article ID 710269, 7 pages
http://dx.doi.org/10.1155/2010/710269
Research Article

Retention Characteristics of CBTi144 Thin Films Explained by Means of X-Ray Photoemission Spectroscopy

1Laboratório Interdisciplinar em Cerâmica, Departamento de Físico-Química, Instituto de Química, Universidade Estadual Paulista, R. Francisco Degni, s/n, Bairro Quitandinha, 14801-970 Araraquara, SP, Brazil
2Universidade Federal de Itajubá-Unifei, Campus Itabira, Rua São Paulo, 377, 35900-373 Bairro Amazonas-Itabira MG, Brazil

Received 5 February 2010; Accepted 6 April 2010

Academic Editor: Zoe Barber

Copyright © 2010 G. Biasotto et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

(CBTi144) thin films were grown on Pt/Ti/ /Si substrates using a soft chemical solution and spin-coating method. Structure and morphology of the films were characterized by the X-ray Diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), Raman analysis, X-ray photoemission spectroscopy (XPS), and transmission electron microscopy (TEM). The films present a single phase of layered-structured perovskite with polar axis orient. The a/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. XPS measurements were employed to understand the nature of defects on the retention behavior of CBTi144 films. We have observed that the main source of retention-free characteristic of the capacitors is the oxygen environment in the CBTi144 lattice.