Fabrication of  Si<sub>3</sub>N<sub>4</sub> Nanocrystals and Nanowires Using PECVD

<table>(a) A SEM image of <svg height="15.65" id="M34" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 37.9375 15.65" width="37.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,12.575,15.45)"><path d="M285 378v-2q65 -13 102 -54.5t37 -97.5q0 -57 -30.5 -104.5t-74 -75t-85.5 -42t-72 -14.5q-31 0 -59.5 11t-40.5 23q-19 18 -16 36q1 16 23 33q13 10 24 0q58 -51 124 -51q55 0 88 40t33 112q0 64 -39 96.5t-88 32.5q-29 0 -64 -11l-6 29q77 25 118 57.5t41 84.5
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<g transform="matrix(.017,-0,0,-.017,18.912,11.362)"><path d="M719 650v-28q-43 -2 -62 -15t-22 -44q-6 -47 -6 -169v-403h-31l-426 524h-2v-251q0 -111 6 -169q4 -37 24 -50.5t72 -16.5v-28h-237v28q45 2 64.5 16t23.5 49q6 62 6 171v220q0 54 -3 68.5t-17 32.5q-16 19 -34.5 26.5t-54.5 10.5v28h147l418 -502h3v246q0 117 -7 166
q-4 34 -24.5 47t-73.5 15v28h236z" id="x4E"></path></g>
<g transform="matrix(.012,-0,0,-.012,31.537,15.45)"><path d="M456 178h-96v-72q0 -51 12.5 -62.5t72.5 -16.5v-27h-256v27q65 5 78 17t13 62v72h-260v28q182 271 300 426h40v-407h96v-47zM280 225v295h-2q-107 -148 -196 -295h198z" id="x34"></path></g>
</svg> crystals; (b) a magnification picture.</table>

Advances in Materials Science and Engineering

fig1

Figure 1

Figure 1: Fabrication of  Si<sub>3</sub>N<sub>4</sub> Nanocrystals and Nanowires Using PECVD 

Advances in Materials Science and Engineering

Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD

Figure 1

Fabrication of Si₃N₄ Nanocrystals and Nanowires Using PECVD