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Advances in Materials Science and Engineering
Volume 2010, Article ID 923409, 8 pages
Research Article

Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

1Physics Department, Research Centre for Smart Materials and Energy, Faculty of Mathematics and Natural Sciences (FMIPA), Sebelas Maret University (UNS), Jl. Ir. Sutami no. 36A, Surakarta 57126, Indonesia
2Physics Department, Electronic Materials Laboratory, Faculty of Mathematics and Natural Sciences (FMIPA), Bandung Institute of Technology (ITB), Jl. Ganesha no. 10, Bandung 40132, Indonesia

Received 14 August 2010; Accepted 1 October 2010

Academic Editor: Maria Antonietta Loi

Copyright © 2010 A. H. Ramelan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Epitaxial Sb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580C and 600C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580C with a V/III flux ratio of 3 at the rate of 3.5  m/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237  /V.s and 4.6 ×  , respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers ( , , and ) on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.