Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="923409.fig.002a" src="https://static.hindawi.com/articles/amse/volume-2010/923409/figures/923409.fig.002a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>Samples grown at 580°C</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="923409.fig.002b" src="https://static.hindawi.com/articles/amse/volume-2010/923409/figures/923409.fig.002b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Samples grown at 600°C</td></tr></table></td></tr></table>

<table>Surface morphology of <svg height="16.3125" id="M27" style="vertical-align:-3.27605pt" version="1.1" viewbox="0 0 77.650002 16.3125" width="77.650002" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path d="M673 0h-245v28q47 6 58 16t1 39l-55 154h-213q-31 -87 -36 -129q-16 -47 -5 -61t68 -19v-28h-226v28q50 7 68.5 23.5t43.5 80.5l214 524l24 9l193 -536q23 -63 41.5 -79.5t68.5 -21.5v-28zM418 280l-81 255h-2q-74 -197 -101 -255h184z" id="x41"></path></g><g transform="matrix(.017,-0,0,-.017,11.809,12.162)"><path d="M238 0h-223v26q48 5 60 17t12 61v473q0 50 -10.5 60.5t-58.5 15.5v24q73 8 148 35v-608q0 -49 11.5 -61t60.5 -17v-26z" id="x6C"></path></g>
<g transform="matrix(.012,-0,0,-.012,16.112,16.25)"><path d="M474 0h-214v26q32 4 39 12t-5 28l-74 117q-39 -58 -64 -106q-16 -25 -10 -35t44 -16v-26h-186v26q46 6 64 17t48 49t85 120l-87 136q-23 36 -40 47t-58 16v26h199v-26q-31 -4 -36.5 -12.5t9.5 -29.5l59 -93q37 56 58 94q13 23 7 30t-40 11v26h183v-26q-47 -5 -65 -13.5
t-45 -39.5q-24 -29 -78 -110l97 -148q28 -43 46.5 -55.5t63.5 -18.5v-26z" id="x78"></path></g>
<g transform="matrix(.017,-0,0,-.017,22.35,12.162)"><path d="M692 302v-28q-45 -6 -54.5 -17t-9.5 -55v-86q0 -62 7 -95q-7 -2 -32 -7.5l-37 -8l-35.5 -7.5t-40.5 -7t-38.5 -4t-40.5 -2q-165 0 -266 93t-101 243q0 84 32 151t86 108t121.5 63t142.5 22q29 0 62.5 -4t52 -7.5t47.5 -10.5t31 -7l15 -156l-28 -6q-17 87 -66.5 121.5
t-128.5 34.5q-117 0 -191 -80.5t-74 -216.5q0 -56 17 -110t49.5 -100.5t87.5 -74.5t124 -28q53 0 87 17q17 9 24.5 23t7.5 43v85q0 54 -15.5 67.5t-89.5 18.5v28h254z" id="x47"></path></g><g transform="matrix(.017,-0,0,-.017,34.504,12.162)"><path d="M433 39l-85 -51q-27 0 -47 20q-16 16 -24 44q-5 -3 -24 -16.5t-27 -18.5t-23 -13.5t-25 -12t-19 -3.5q-52 0 -86 36.5t-34 85.5q0 71 81 99q128 43 155 65v17q0 54 -23 83.5t-62 29.5q-28 0 -45 -19t-29 -66q-7 -23 -29 -23q-15 0 -29 13t-14 30t31 40q25 19 68.5 40.5
t81.5 29.5q49 0 82 -27q45 -39 45 -123v-185q0 -60 35 -60q18 0 36 11zM275 84v156q-12 -6 -49 -23t-41 -19q-31 -14 -46 -31t-15 -43q0 -35 22.5 -55.5t48.5 -20.5q19 0 42 10.5t38 25.5z" id="x61"></path></g>
<g transform="matrix(.012,-0,0,-.012,41.962,16.25)"><path d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" id="x31"></path></g><g transform="matrix(.012,-0,0,-.012,47.674,16.25)"><path d="M535 230h-483v50h483v-50z" id="x2212"></path></g>
<g transform="matrix(.012,-0,0,-.012,54.663,16.25)"><path d="M474 0h-214v26q32 4 39 12t-5 28l-74 117q-39 -58 -64 -106q-16 -25 -10 -35t44 -16v-26h-186v26q46 6 64 17t48 49t85 120l-87 136q-23 36 -40 47t-58 16v26h199v-26q-31 -4 -36.5 -12.5t9.5 -29.5l59 -93q37 56 58 94q13 23 7 30t-40 11v26h183v-26q-47 -5 -65 -13.5
t-45 -39.5q-24 -29 -78 -110l97 -148q28 -43 46.5 -55.5t63.5 -18.5v-26z" id="x78"></path></g>
<g transform="matrix(.017,-0,0,-.017,60.9,12.162)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
t30 -51.5t49 -42.5t67 -16q56 0 88 32.5t32 87.5q0 51 -31.5 82t-98.5 67q-80 44 -110 73q-55 53 -55 124q0 75 56 126.5t150 51.5q53 0 126 -23z" id="x53"></path></g><g transform="matrix(.017,-0,0,-.017,68.957,12.162)"><path d="M152 404l81 35q23 10 41 10q81 0 139 -61.5t58 -149.5q0 -107 -74.5 -178.5t-176.5 -71.5q-71 0 -147 36v555q0 48 -9.5 59.5t-56.5 15.5v23q79 10 145 35v-308zM152 374v-258q0 -20 6 -35q7 -19 30 -37t58 -18q63 0 99.5 50t36.5 137q0 82 -43.5 131t-108.5 49
q-44 0 -78 -19z" id="x62"></path></g>
</svg> epilayers grown on GaAs with a different Alcontent grown at 580°C and 600°C with a V/III ratio of 3.</table>

Advances in Materials Science and Engineering

fig2

Figure 2

Figure 2: Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition 