Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

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</svg> grown at 600°C with a V/III ratio of 3.</table>

Advances in Materials Science and Engineering

fig5

Figure 5

Figure 5: Growth of  AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition 