Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

Table 1

Hole mobility and carrier concentration of Al_xGa_1-xSb.

Material	Tg (°C)	V/III ratio	Mobility (cm^2/V.s)	Concentration (cm^-3)	Source
Al0.22Ga0.78Sb	600	2.0	197 (300 K)	1.6 × 10^18	Koljonen et al. [10]
Al0.32Ga0.68Sb	650	2.5	163 (300 K)	5.7 × 10^18	Koljonen et al. [10]
Al0.76Ga0.24Sb	650	1.5	93 (300 K)	1.2 × 10^19	Koljonen et al. [10]
Al0.1Ga0.9Sb	600	—	232 (77 K)	5 × 10^17	Chidley et al. [21]
Al0.2Ga0.8Sb	600	—	97 (300 K)	5 × 10^19	Chidley et al. [21]
Al0.1Ga0.9Sb	600	3	237 (77 K)	4.6 × 10^17	This work
Al0.2Ga0.8Sb	600	3	176 (300 K)	4.0 × 10^18	This work
Al0.2Ga0.8Sb	580	3	199 (300 K)	2.1 × 10^18	This work