High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM

<table>SPM scans of the crater edge in semiconductor laser after 40 and 200 frames using 100 pA 20 keV Ga<sup>+</sup>. The crater wall is not perfectly normal to the crater floor, but the slope remains constant as the crater becomes deeper.</table>

Advances in Materials Science and Engineering

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Figure 20

Figure 20: High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with <i>In Situ</i> AFM 

Figure 20 | High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument with In Situ AFM 