Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Figure 1
Silicon SET with a small number of phosphorus atoms implanted nearby. (a) SEM image of the device. (b) In the presence of a large externally applied magnetic field tunneling from a phosphorus donor to the SET island becomes spin dependent. (c) SET current versus top and plunger gate voltage. The breaks are due to charge transfer events (as in [14]).
