Nonstoichiometry in TiO_2−𝑦 Studied by Ion Beam Methods and Photoelectron Spectroscopy

Table 3

Binding energies of Ti 2p_3/2 and O 1s states for TiO_2−𝑦 thin films deposited by reactive sputtering as compared to the literature data.

Binding energy (eV)						Reference
OII	OI	Ti^4+	Ti^3+	Ti^2+	Ti^0
531.9	529.7	458.5	455.8		453.5	Reactive sputtering 𝑆𝑑=0.23 nm/s
531.9	530.0	458.6	456.3		453.9	Reactive sputtering 𝑆𝑑=1.82 nm/s
—	—	459.0	457.5	455.3	453.9	[68]
532.0	530.3	459.4	457.9	455.4	454.2	[63]
532.4	530.1	458.5	456.7	455.9	—	[62]
—	—	458.5	456.3	—	453.8	[70]
—	—	458.5	456.8	455.0	—	[71]
—	529.5	457.9	456.6	—	—	[67]
		Binding energy shifts (eV) relative to Ti^4+
		0.0	−2.7		−5.0	Reactive sputtering 𝑆𝑑=0.23 nm/s
		0.0	−2.3		−4.7	Reactive sputtering 𝑆𝑑=1.82 nm/s
		0.0	−1.9	−3.5	−5.3	[66]
		0.0	−1.5	−3.8	−4.7	[65]
		0.0	−1.5	−3.5	−5.1	[68]