Advances in Materials Science and Engineering / 2012 / Article / Tab 3

Review Article

Nonstoichiometry in Studied by Ion Beam Methods and Photoelectron Spectroscopy

Table 3

Binding energies of Ti and O 1s states for thin films deposited by reactive sputtering as compared to the literature data.

Binding energy (eV)Reference
OIIOITi4+Ti3+Ti2+Ti0

531.9529.7458.5 455.8453.5Reactive sputtering  nm/s
531.9530.0458.6 456.3453.9Reactive sputtering  nm/s
459.0457.5455.3453.9[68]
532.0530.3459.4457.9455.4454.2[63]
532.4530.1458.5456.7455.9[62]
458.5456.3453.8[70]
458.5456.8455.0[71]
529.5457.9456.6[67]

Binding energy shifts (eV) relative to Ti4+

0.0 −2.7−5.0Reactive sputtering  nm/s
0.0 −2.3−4.7Reactive sputtering  nm/s
0.0−1.9−3.5−5.3[66]
0.0−1.5−3.8−4.7[65]
0.0−1.5−3.5−5.1[68]

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